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single IGBT driver, Suitable for multi-level all 6500V HV-IGBTs,working frequency 12kHz

single IGBT driver, Suitable for multi-level all 6500V HV-IGBTs,working frequency 12kHz

single IGBT driver, Suitable for multi-level all 6500V HV-IGBTs,working frequency 12kHz

Product Details:

Place of Origin: China
Brand Name: power-sem
Model Number: PSHI 512F65A-73
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Detailed Product Description

● ASIC single IGBT driver
● Suitable for multi-level all 6500V HV-IGBTs
● Short circuit and over current protection by VCEsat monitoring
● Supply VGE undervoltage protection (>-7.5V,<+12.5V)
● Error “soft turn-off”
● Dynamic “soft turn-off”+active clamping
● Internal isolated DC/DC power supply
● Isolation voltage 12kVac ● 1min
● ±40A peak current output
● IGBT gate drive voltage +15V/-10V
● 500ns signal conversion time
● 30ns error signal feedback time
● 400ns narrow pulse inhibit
● Max. working frequency 12kHz
● Fiber-optic interface
● IGBT turn on/off status indication
● Clearance distance from primary side to secondary side is 32mm
 
PSHI 512F65A-73

Absolute Maximum Ratings(Ta=25℃)

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

350

mA

PDC/DC

Total power of DC/DC isolation power output

5

W

IO

Max. logic signal output current

10

mA

IoutAV

Output average current per channel

140

mA

IoutPEAK

Output peak current per channel

±40

A

VCES

IGBT collector-emitter voltage

6500

V

Visol IO

Isolation voltage IN-OUT(1 minute. AC)

13

kV

RGon/off min

Minimal Rgon/Rgoff

0.65

Ω

Qout/pulse

Minimal charge per pulse

±25

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSW max

Max. working frequency

12

kHz

Top

Operating temperature

-45...+85

Tstg.

Storage temperature

-45...+85

 

Electrical Characteristics *(Ta=25℃)

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load current primary fSW=0

fSW=8kHz

 

110

125

 

 

mA

VG(on)

Turn-on gate voltage

 

+15

 

 

V

VG(off)

Turn-off gate voltage

 

-10

 

 

V

VG(onTH)

IGBT turn-on threshold voltage

 

+13.5

 

 

V

VG(offTH)

IGBT turn-off threshold voltage

 

-4.5

 

 

V

td(on)IO

IN-OUT turn-on delay time

 

500

 

 

ns

td(off)IO

IN-OUT turn-off delay time

 

500

 

 

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

 

30

 

 

ns

tmd

Narrow pulse restrained

 

400

 

 

ns

tpReset

error automatic reset time

30

 

 

 

μs

tp(err)

Error signal pulse width

 

30

 

 

μs

VCEstat

Reference voltage for VCEmonitoring

20

55

60

55

V

CPS

Primary to secondary capacitance

 

8

 

 

pf

*Electrical Characteristics do not contain fiber-optic link and photoelectric conversion parameters(HFBR-2521/HFBR-1521)

 

● 3-level and multi-level applications
● Traction
● SVG
● Medium-voltage converter
● Mine inverter
● Wind-power converter
● Smart power grids
● Active power filter

 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Contact Details
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Contact Person: Miss. Alice

Tel: 86--13521775103

Fax: 86-010-69711385

Send your inquiry directly to us (0 / 3000)