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3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

3-level IGBT driver Core,Suitable for all IGBTs up to 600V/1200V/1700V, PSHI 0432

Product Details:

Place of Origin: China
Brand Name: power-sem
Model Number: PSHI 0432
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Detailed Product Description

1.feature

●ASIC 3-level IGBT driver
●Suitable for all IGBTs up to 600V/1200V/1700V
●Used to drive the upper/lower bridge arm dual IGBT
●Integrated control signal timing management
●Short circuit and over current protection by VCEsat monitoring
● Active-clamping+dynamic spike restrian
●Isolation due to nanometer amorphous transformer
●Supply undervoltage protection (<12.5V)
●Gate voltage monitoring
●Timing time adjustable externally
●Internal isolated DC/DC power supply
●±15A peak current output
●IGBT gate drive voltage+15V/-9V
●350ns signal conversion time
●110ns error signal feedback time
●100ns narrow pulse inhibit eliminate radio frequency interference
●Max. working frequency 100kHz
●Error chain function, low level active
●Clearance distance from primary side to secondary side is 39mm
 
2.parameter
PSHI 0432

Absolute Maximum Ratings(Ta=25℃)

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

330

mA

PDC/DC

Total power of DC/DC isolation power output

4

W

Vin

Max. PWM input level(VinI; VinO)

VS+0.7

V

ViH

Max. logic signal input voltage

(External error signal)

VS+0.7

V

IOC

Max. logic signal output currect

(Open-collector output current)

10

mA

IoutAV

Output average current per channel

80

mA

IoutPEAK

Output peak current per channel

±15

A

VCES

IGBT collector-emitter voltage

PSHI 0432

PSHI 0432 Pro

--

1200

1700

V

Visol IO

Isolation voltage IN-OUT(1 minute. AC)

PSHI 0432

PSHI 0432 Pro

--

5000

8000

V

Visol AB

Isolation voltage OUT A-OUT B(1 minute. AC)

PSHI 0432

PSHI 0432 Pro

--

4000

5000

V

RGon/off min

Minimal Rgon/Rgoff

1.6

Ω

Qout/pulse

Charge per pulse

±10

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSW max

Max. working frequency

100

kHz

Top

Operating temperature

-40...+85

Tstg.

Storage temperatature

-45...+85

 

Electrical Characteristics(Ta=25℃)

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load currect primary

fSW= 0kHz

fSW=20kHz

fSW=50kHz

 

--

80

100

120

 

 

mA

VIT+

Input high level: 15V level

12

 

 

 

V

VIT-

Input low level: 15V level

 

 

4.5

 

V

Rin

Input resistance

 

33

 

 

VG(on)

Turn-on gate voltage

 

+15

 

 

V

VG(off)

Turn-off gate voltage

 

-9

 

 

V

td(on)IO

IN-OUT turn-on delay time

 

350

 

 

ns

td(off)IO

IN-OUT turn-off delay time

 

350

 

 

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

 

110

 

 

ns

tmd

Narrow pulse restrained

 

100

 

 

ns

VCEstat

Reference voltage for VCEmonitoring

VCE=1700V

VCE=1200V

2

--

--

 

6.8

--

--

--

6.2

5.3

V

VLevel

Logic level (External error input; reset signal; mode select)

 

+8

 

+15

V

tpReset

Vininput both Low reset time

 

20

 

 

μs

CPS

Primary to secondary capacitance

 

8

 

 

pf

 
3.Application
●Diode-clamped 3-level topology
●Dual PWM control 3-level topology
●SVG
●Inverter
●photovoltaic inverter
●High power UPS
●High power high frequency SMPS

 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Contact Details
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Contact Person: Miss. Alice

Tel: 86--13521775103

Fax: 86-010-69711385

Send your inquiry directly to us (0 / 3000)