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PSHI 0421..........

PSHI 0421..........

Product Details:

Place of Origin: Beijing, China
Brand Name: power-sem
Model Number: PSHI 0421
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Detailed Product Description

1.feature

●ASIC dual IGBT driver
●Suitable for all IGBTs up to 1200V/1700V
●Half-bridge mode select,also two independent single drives
●Short circuit and over current protection by VCEsat monitoring
●Realize voltage spike restrain by "voltage sensor".
●Isolation due to nanometer amorphous transformer
●Supply undervoltage protection (<12.5V)
●Error memory
●Driver interlock top/bottom in half-bridge mode
●Dead time adjustable
●Internal isolated DC/DC power supply
●±15A peak current output
●IGBT gate drive voltage+15V/-9V
●650ns signal conversion time
●110ns error signal feedback time
●400ns narrow pulse inhibit eliminate radio frequency interference
●Max. working frequency 100kHz
●Error chain function, low level active
●Dynamic turn-off spike restrain
●Clearance distance from primary side to secondary side is 42mm
2.parameter
Absolute Maximum Ratings(Ta=25℃)

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

300

mA

PDC/DC

Total power of DC/DC isolation power output

4

W

Vin

Max. PWM input level VinA; VinB

VS+0.5

V

ViH

Max. logic signal input voltage

(Mode select;reset signal;external error)

VS+0.5

V

IOC

Max. logic signal output currect

(Open-collector output current)

10

mA

IoutAV

Output average current per channel

60

mA

IoutPEAK

Output peak current per channel

±15

A

VCES

IGBT collector-emitter voltage

1700

V

Visol IO

Isolation voltage IN-OUT(10 sec.AC)

5000

V

Visol AB

Isolation voltage OUT A-OUT B(10 sec.AC)

2500

V

RGon/off min

Minimal Rgon/Rgoff

1.6

Ω

Qout/pulse

Charge per pulse

±3

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSWmax

Max. working frequency

100

kHz

Top

Operating temperature

-40...+85

Tstg.

Storage temperatature

-45...+85

Electrical Characteristics(Ta=25℃)

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load currect primary fSW=
0kHz

fSW=20kHz

fSW=100kHz

80

100

130

mA

VIT+

Input high level: 15V level

5V level

12

3.2

V

VIT-

Input low level: 15V level

5V level

4.5

1.9

V

Rin

Input resistance

33

VG(on)

Turn-on gate voltage

+15

V

VG(off)

Turn-off gate voltage

-9

V

td(on)IO

IN-OUT turn-on delay time

650

ns

td(off)IO

IN-OUT turn-off delay time

600

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

110

ns

tmd

Narrow pulse restrained

400

ns

VCEstat

Reference voltage for VCEmonitoring

VCE=1700V

VCE=1200V

2

6.8

6.2

5.3

V

VLevel

Logic level (External error input; reset signal; mode
select)

+8

+15

V

tpReset

Vininput both Low reset time

10

μs

tTD

Dead time adjusted from factory

(half-bridge interlock mode)

.05

5

μs

CPS

Primary to secondary capacitance

12

pf

① This value can be expanded externally (on adapter board) by pins.

② Attention! Pins XS.6,7 should not connect to power supply VSor GND directlyMin.RTDis 1kΩ and corresponding tTDis about 0.05μs

3.application

●Single or bridge circuit
●Inverter
●Welding machine
●Induction heating
●Converter
●High power UPS
●High power high frequency SMPS



























Contact Details
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Contact Person: Miss. Alice

Tel: 86--13521775103

Fax: 86-010-69711385

Send your inquiry directly to us (0 / 3000)