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High Power IGBT Driver, Dual IGBT Driver, PSHI 0622

High Power IGBT Driver, Dual IGBT Driver, PSHI 0622

High Power IGBT Driver,  Dual IGBT Driver, PSHI 0622

Product Details:

Place of Origin: China
Brand Name: power-sem
Model Number: PSHI 0622
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Detailed Product Description

● ASIC dual IGBT driver
● Suitable for all IGBTs up to 1200V/1700V
● Half-bridge mode select,also two independent single drives
● Short circuit and over current protection by VCEsat monitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
●Error "soft turn-off"
● Driver interlock top/bottom in half-bridge mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±25A peak current output
● IGBT gate drive voltage+15V/-9V
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio frequency interference
● Max. working frequency 100kHz
● Error chain function, low level active
●Turn-off spike restrain by "dynamic soft turn-off"

Absolute Maximum Ratings(Ta=25℃ )

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

430

mA

PDC/DC

Total power of DC/DC isolation power output

6

W

Vin

Max. PWM input level VinA; VinB

VS+0.5

V

ViH

Max. logic signal input voltage

(Mode select;reset signal;external error)

VS+0.5

V

IOC

Max. logic signal output currect

(Open-collector output current)

10

mA

IoutAV

Output average current per channel

100

mA

IoutPEAK

Output peak current per channel

±25

A

VCES

IGBT collector-emitter voltage

1700

V

Visol IO

Isolation voltage IN-OUT(10 sec.AC)

4000

V

Visol AB

Isolation voltage OUT A-OUT B(10 sec.AC)

3000

V

RGon/off min

Minimal Rgon/Rgoff

1

Ω

Qout/pulse

Charge per pulse

±15

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSWmax

Max. working frequency

100

kHz

Top

Operating temperature

-40...+85

Tstg.

Storage temperatature

-45...+85

 

Electrical Characteristics(Ta=25℃ )

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load currect primary

fSW=0kHz

fSW=20kHz

fSW=100kHz

 

-

80

100

130

 

 

mA

VIT+

Input high level:

15V level

5V level

--

12

3.2

 

 

 

V

VIT-

Input low level:

15V level

5V level

 

 

--

4.5

1.9

 

V

Rin

Input resistance

 

33

 

 

VG(on)

Turn-on gate voltage

 

+15

 

 

V

VG(off)

Turn-off gate voltage

 

-9

 

 

V

td(on)IO

IN-OUT turn-on delay time

 

650

 

 

ns

td(off)IO

IN-OUT turn-off delay time

 

600

 

 

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

 

110

 

 

ns

tmd

Narrow pulse restrained

 

400

 

 

ns

VCEstat

Reference voltage for VCEmonitoring

VCE=1700V

VCE=1200V

2

-

-

 

6.8

-

-

-

6.2

5.3

V

VLevel

Logic level (External error input; resetsignal; mode select)

 

+8

 

+15

V

tpReset

Vininput both Low reset time

 

10

 

 

μs

tTD

Dead time adjusted from factory

(half-bridge interlock mode)

.05

5

 

 

μs

CPS

Primary to secondary capacitance

 

12

 

 

pf

① This value can be expanded externally (on adapter board) by pins.

② Attention!
Pins XS.3,7 should not connect to power supply VSor GND
directly
,Min.RTDis 1kΩ and corresponding tTDis about 0.05μs.

 

● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS

 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Contact Details
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Contact Person: Miss. Alice

Tel: 86--13521775103

Fax: 86-010-69711385

Send your inquiry directly to us (0 / 3000)