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PSHI 2522 PSHI 2522F Dual IGBT Driver

PSHI 2522 PSHI 2522F Dual IGBT Driver

PSHI 2522    PSHI 2522F  Dual IGBT Driver

Product Details:

Place of Origin: China
Brand Name: power-sem
Model Number: PSHI 2522
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Detailed Product Description

● ASIC dual IGBT driver
● Suitable for all IGBTs up to 1200V/1700V
● Half-bridge mode select,also two independent single drives
● Short circuit and over current protection by VCEsat monitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
●Error "soft turn-off"
● Driver interlock top/bottom in half-bridge mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±80A peak current output
● IGBT gate drive voltage+15V/-10V
● 650ns signal conversion time
● 110ns error signal feedback time
●400ns narrow pulse inhibit eliminate radio frequency interference
● Max. working frequency 50kHz
● Error chain function, low level active
●Turn-off spike restrain by "dynamic soft turn-off"
●Supply 4 groups of IGBT parallel interface
●Supply fiber-optic signal interface("F" type)

Absolute Maximum Ratings(Ta=25℃ )

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

1450

mA

PDC/DC

Total power of DC/DC isolation power output

25

W

Vin

Max. PWM input level VinA; VinB

VS+0.5

V

ViH

Max. logic signal input voltage

(Mode select;reset signal;external error)

VS+0.5

V

IOC

Max. logic signal output currect

(Open-collector output current)

10

mA

IoutAV

Output average current per channel

450

mA

IoutPEAK

Output peak current per channel

±80

A

VCES

IGBT collector-emitter voltage

1700

V

Visol IO

Isolation voltage IN-OUT(10 sec.AC)

4000

V

Visol AB

Isolation voltage OUT A-OUT B(10 sec.AC)

4000

V

RGon/off min

Minimal Rgon/Rgoff

0.32

Ω

Qout/pulse

Charge per pulse

±60

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSWmax

Max. working frequency

50

kHz

Top

Operating temperature

-40...+85

Tstg.

Storage temperatature

-45...+85

Electrical Characteristics(Ta=25℃ )

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load currect primary

fSW=0kHz

fSW=20kHz

fSW=100kHz

-

130

150

180

mA

VIT+

Input high level:

15V level

5V level

--

12

3.2

V

VIT-

Input low level:

15V level

5V level

--

4.5

1.9

V

Rin

Input resistance

33

VG(on)

Turn-on gate voltage

+15

V

VG(off)

Turn-off gate voltage

-10

V

td(on)IO

IN-OUT turn-on delay time

650

ns

td(off)IO

IN-OUT turn-off delay time

600

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

110

ns

tmd

Narrow pulse restrained

400

ns

VCEstat

Reference voltage for VCEmonitoring

VCE=1700V

VCE=1200V

2

-

-

6.8

-

-

-

6.2

5.3

V

VLevel

Logic level (External error input; resetsignal; mode select)

+8

+15

V

tpReset

Vininput both Low reset time

10

μs

tTD

Dead time adjusted from factory

(half-bridge interlock mode)

.05

5

μs

CPS

Primary to secondary capacitance

12

pf

① This value can be expanded externally (on adapter board) by pins.

② Attention! Pins XS.3,7 should not connect to power supply VSor GND directlyMin.RTDis 1kΩ and corresponding tTDis about 0.05μs.

● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS



























Contact Details
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Contact Person: Miss. Alice

Tel: 86--13521775103

Fax: 86-010-69711385

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