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PSHI 0822-33

PSHI 0822-33

Product Details:

Place of Origin: Beijing, China
Brand Name: power-sem
Model Number: PSHI 0822-33
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Detailed Product Description

1.feature

● ASIC dual HV-IGBT driver core
● Suitable for 3300V dual IGBTs
● Half-bridge mode select,also two independent single drives
● Short circuit and over current protection by VCEsatmonitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
● Error “soft turn-off”
● Dynamic spike restrain
● Driver interlock top/bottom in half-bridge mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±25 Apeak current output
● IGBT gate drive voltage +15V/-9V
● gate drive voltage monitoring(<12.5V,>-7.5V)
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio frequency interference
● Max. working frequency 10kHz
● Error chain function, low level active
● Clearance distance from primary side to secondary side is 35mm
2.parameter

PSHI 0822-33

Absolute Maximum Ratings (Ta=25℃)

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

550

mA

PDC/DC

Total power of DC/DC isolation power output

8

W

Vin+

Max.PWM input level (VinA; VinB)

VS+0.5

V

Vin-

Min.PWM input level (VinA; VinB)

GND-0.5

V

ViH

Max. logic signal input voltage

(mode select /reset signal and external error )

VS+0.5

V

IOC

Max. logic signal output current

(Open-collector output current)

10

mA

IoutAV

Output average current per channel

150

mA

IoutPEAK

Output peak current per channel

±25

A

VCES

IGBT collector-emitter voltage

3300

V

Visol IO

Isolation voltage IN-OUT(5 sec. AC)

8000

V

Visol AB

Isolation voltage IN A-OUT B(5 sec. AC)

6000

V

RGon/off min

Minimal Rgon/Rgoff

1

Ω

Qout/pulse

Charge per pulse

±10

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSW max

Max. working frequency

10

kHz

Top

Operating temperature

-40...+85

Tstg.

Storage temperature

-45...+85

Electrical Characteristics (Ta=25℃)

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load current primary fSW=0

fSW=10kHz

80

100

mA

VIT+

Input high level: 15V level

5V level

12

3.2

V

VIT-

Input low level: 15V level

5V level

4.5

1.9

V

Rin

Input resistance

33

VG(on)

Turn-on gate voltage

+15

V

VG(off)

Turn-off gate voltage

-9

V

td(on)IO

IN-OUT turn-on delay time

650

ns

td(off)IO

IN-OUT turn-off delay time

600

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

110

ns

tmd

Narrow pulse restrained

400

ns

VCEstat

Reference voltage for VCEmonitoring

20

40

35

V

VLevel

Logic level (External error input; reset signal; mode select)

+8

+15

V

tpReset

Vininput both Low reset time

10

μs

tTD

Dead time adjusted from factory

(half-bridge interlock mode)

.05

5

μs

CPS

Primary to secondary capacitance

10

pf

① This value can be expanded externally (on adapter board )by pins.

② Attention! Pins XS.8,9 should not connect to power supply VSor GND directly, Min.RTDis 1kΩ and corresponding tTDis about 0.05μs.

3.application

● Single or bridge circuit
● Medium-voltage converter
● SVG
● Inverter
● High power UPS
● High power high frequency SMPS


























Contact Details
BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Contact Person: Miss. Alice

Tel: 86--13521775103

Fax: 86-010-69711385

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